SEMICONDUCTOR
RoHS
20PT Series
RoHS
Fig.5 Relative variation of gate trigger
current, holding current and latching
current and latching current versus
junction temperature.
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
2.0
l
GT
200
180
160
140
120
100
80
60
40
Fig.6 Surge peak on-state current versus
number of cycles.
I
TSM
(A)
t
p
=20ms
1.5
1.0
0.5
I
H
&
I
L
Non repetitive
T
j
initial = 25°C
Repetitive
T
case
= 100 °C
One cycle
T
J
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
20
0
1
10
Number of cycles
100
1000
Fig.7 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
values of l
2
t
2000
T
j
initial = 25°C
Fig.8 On-state characteristics (maximum
values)
200
l
TSM
1000
100
T
j
max.:
V
to
= 0.77V
R
d
= 23mΩ
dl/dt
limitattion
T
j
max
l
2
t
10
T
j
= 25°C
100
10
0.01
t
p
(ms)
0.10
1.00
10.00
1
0.0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
3.0
3.5
4.0
4.5
Fig.9 Thermal resistance junction to ambient
versus copper surface under tab
(epoxy printed circuit board Fr4,
copper thickness:35 µm)(D
2
PAK)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
S(cm
2
)
20
24
28
32
36
40
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