SEMICONDUCTOR
RoHS
20T Series
RoHS
Fig.3 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
25
α
=180°
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Z
th
/R
th
]
1
20
15
10
5
0
0
10
20
30 40
50
TO-220AB
TO-263
TO-3P
Z
th(j-c)
Z
th(j-a)
TO-220AB (insulated)
TO-3P ( insulated )
0.1
T
c
(°C)
60
70
80
90 100 110 120 130
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Fig.5 On-state characteristics (maximum values).
Fig.6 Surge peak on-state current versus number
of cycles.
I
1000
(A)
T
j
max.
V
to
= 1.04V
R
d
= 20Ωm
T
j
=T
j
max
I
TSM
(A)
1000
t=20ms
100
Non repetitive
T
j
initial=25°C
One cycle
10
T
j
=25°C
V
TM
(V)
1
1
2
3
4
5
Number of cycles
100
1
10
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
l
TSM
(A), l
2
t(A
2
s)
1000
T
j
initial=25°C
2.0
I
TSM
2.5
Fig.8 Relative variation of gate trigger current and
holding current versus junction temperature.
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
1.5
I
GT
I
2
t
1.0
I
H
&
I
L
0.5
t
p
(ms)
100
0.01
0.10
1.00
10.00
0.0
-40 -30 -20 -10
0
T
j
(°C)
10 20 30 40 50 60 70 80 90 100 110 120 130
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