SEMICONDUCTOR
RoHS
20T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS (3 quadrants)
20Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 20 A/ms, T
j
= 125°C
MAX.
MIN.
MIN.
TEST CONDITIONS
QUADRANT
CW
I
-
II
-
III
V
D
= 12 V, R
L
= 33Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
40
50
60
250
11
1.5
0.2
60
70
80
500
18
mA
V/µs
A/ms
V
V
mA
MAX.
35
BW
50
Unit
mA
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 28 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
2.5
mA
MAX.
MAX.
MAX.
VALUE
1.55
1.04
20
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case
(AC)
S = 1 cm
2
VALUE
TO-220AB, TO-263, TO-3P
TO-220AB Insulated, TO-3P Insulated
TO-263
TO-220AB Insulated, TO-220AB
TO-3P, TO-3P Insulated
1.3
2.1
45
60
UNIT
°C/W
R
th(j-a)
Junction to ambient
S
=
Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
20TxxA-CW/ 20TxxAl-CW
20TxxA-BW/20TxxAl-BW
20TxxB-CW/20TxxBl-CW
20TxxB-BW/20TxxBl-BW
20TxxH -CW
20TxxH -BW
AI:
Insulated TO-220AB package
BI:
Insulated TO-3P package
V
V
V
V
V
V
800
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
35
mA
50
mA
35
mA
50
mA
35
mA
50
mA
Snubberless
Snubberless
Snubberless
Snubberless
Snubberless
Snubberless
TO-220AB
TO-220AB
TO-3P
TO-3P
D
2
PAK
D
2
PAK
SENSITIVITY
TYPE
PACKAGE
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