SEMICONDUCTOR
RoHS
25PT Series
RoHS
Fig.5 Relative variation of thermal
impedance versus pulse duration.
(TO-220AB ins)
Fig.6 Relative variation of gate trigger
holding, and latching currents
versus junction temperature.
K=[Z
th
/R
th
]
1.0E+01
2.5
2.0
1.5
1.0E-01
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
Z
th(j-c)
l
GT
Z
th(j-a)
1.0
0.5
I
H
&
I
L
t
P
(s)
1.0E-02
1.0E-03 1.0E-02
1.0E-01
1.0E+00 1.0E+01
1.0E+02
1.0E+03
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
Fig.7 Surge peak on-state current versus
number of cycles.
Fig.8 Non-repetitive surge peak on-state
current , and corresponding values
of l
2
t
I
TSM
(
A
)
, l²t (A²s)
T
j
initial = 25°C
350
300
250
200
150
100
50
0
I
TSM
(
A
)
T
p
=
1
0ms
2000
1000
l
TSM
One cycle
Non repetitive
T
j
initial = 25
°
C
dl/dt
limitattion
Repetitive
T
case
= 83 °C
l
2
t
Number of cycles
10
100
1000
100
0.01
Sinusoidal pulse width t p (ms)
0.10
1.00
10.00
1
Fig.9 On-state characteristics (maximum
values)
Fig.10 Thermal resistance junction to
ambient versus copper surface
under tab (D
2
PAK)
I
TM
(
A
)
1000
80
70
60
100
50
40
10
T
j
max.:
V
to
= 0.77V
R
d
= 14m
R
th
(
j-a
)
(°C/W)
Epoxy printed circuit board FR4,
copper thickness = 35 µm
30
20
10
0
0
4
8
12
16
1
0.0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
3.0
S(cm
2
)
20
24
28
32
36
40
3.5
4.0
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