RoHS
25PT Series RoHS
SEMICONDUCTOR
Fig.6 Relative variation of gate trigger
holding, and latching currents
versus junction temperature.
Fig.5 Relative variation of thermal
impedance versus pulse duration.
(TO-220AB ins)
K=[Zth/Rth]
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
2.5
2.0
1.5
1.0E+01
Z
th(j-c)
l
GT
1.0E-01
I
H
& I
L
1.0
0.5
0.0
Z
th(j-a)
tP(s)
Tj(°C)
1.0E-02
1.0E+03
-40
-20
0
20
40
60
80
100
120
140
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02
Fig.7 Surge peak on-state current versus
number of cycles.
Fig.8 Non-repetitive surge peak on-state
current , and corresponding values
of l2t
ITSM (A), l²t (A²s)
ITSM (A)
2000
1000
350
300
250
200
150
100
Tj initial = 25°C
Tp=10ms
One cycle
lTSM
Non repetitive
T initial = 25°C
j
l2t
dl/dt
limitattion
Repetitive
T
50
0
Sinusoidal pulse width t (ms)
p
= 83 °C
case
Number of cycles
100
0.01
0.10
1.00
10.00
1
10
100
1000
Fig.9 On-state characteristics (maximum
values)
Fig.10 Thermal resistance junction to
ambient versus copper surface
under tab (D2PAK)
ITM (A)
R
th (j-a)(°C/W)
1000
100
80
70
60
50
40
30
20
Epoxy printed circuit board FR4,
copper thickness = 35 µm
10
1
Tj max.:
Vto = 0.77V
Rd = 14m
10
0
S(cm2)
VTM(V)
0.0 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4
8
12 16
20 24 28 32
36 40
Page 4 of 5
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