SEMICONDUCTOR
RoHS
25PT Series
RoHS
Stansard SCRs, 25A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
25
600 to 1600
4 to 40
Unit
A
V
mA
1
2
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(25PTxxA)
TO-220AB
(lnsulated)
(25PTxxAI)
A2
DESCRIPTION
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A1 A2
G
2
(A2)
TO-263
(D
2
PAK)
(25PTxxH)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated
I
T(AV)
TO-263/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F = 60 Hz
T
p
= 20 µs
T
p
=20
µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
Tc=100°C
Tc=83°C
Tc=100°C
16
Tc=83°C
t = 20 ms
t = 16.7 ms
300
314
450
50
4
10
1
600 to 1600
- 40 to + 150
ºC
- 40 to + 125
A
A
2
s
A/µs
A
W
W
V
A
25
VALUE
UNIT
A
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
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