SEMICONDUCTOR
RoHS
25T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
25Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T j = 125°C
Without snubber, T j = 125°C
MAX.
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MIN.
MAX.
50
70
80
500
MIN.
13
22
A/ms
MAX.
1.3
0.2
75
80
mA
100
1000
V/µs
V
V
mA
Unit
CW
35
BW
50
mA
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
25Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c =13.3 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
B
MAX.
50
100
1.3
0.2
80
70
160
500
10
V/µs
V/µs
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 35 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
3
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
16
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
TO-3P
TO-263/TO-220AB
TO-3P Insulated
TO-220AB Insulated
S = 1 cm
2
VALUE
0.6
0.8
0.9
1.7
45
60
50
UNIT
R
th(j-c)
Junction to case
(AC)
TO-263
TO-220AB Insulated, TO-220AB
TO-3P, TO-3P Insulated
°C/W
R
th(j-a)
Junction to ambient
S
=
Copper surface under tab.
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