RoHS
25T Series RoHS
SEMICONDUCTOR
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 RMS on-state current versus case temperature
(full cycle)
P (W)
IT(RMS) (A)
30
30
TO-3P
25
20
25
20
TO-220AB
(insulated)
15
10
5
15
10
5
TO-220AB
TO-263
TO-3P(insulated)
IT(RMS)(A)
TC(°C)
0
0
0
25
50
75
100
125
0
5
10
15
20
25
Fig.3 D2PAK RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
IT(RMS) (A)
K=[Zth/Rth]
4.0
1E+0
D2PAK
Zth(j-c)
3.5
3.0
2.5
2.0
1.5
1.0
(S=1cm2)
Zth(j-a)
TO-263AB
TO-220AB
1E-1
TO-220AB (insulated)
1E-2
1E-3
Zth(j-a)
TO-3P(insulated)
0.5
0.0
Tamb(°C)
tp(s)
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.6 Surge peak on-state current versus number
of cycles.
Fig.5 On-state characteristics (maximum values).
I
(A)
ITSM (A)
300
250
200
150
100
300
T max.
j
to
d
V
= 0.85 V
t=20ms
100
10
1
R
= 16 mΩ
One cycle
Non repetitive
T =T max
j
j
T initial=25°C
j
T =25°C
j
Repetitive
T =75°C
c
50
0
VTM(V)
Number of cycles
1
10
100
1000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
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