SEMICONDUCTOR
RoHS
26T Series
RoHS
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P
(W)
30
25
20
15
10
5
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
30
25
20
15
10
5
TO-220AB
TO-263
TO-3P(insulated)
TO-220AB
( insulated )
TO-3P
I
T(RMS)
(A)
0
0
5
10
15
20
25
0
0
25
50
T
C
(°C)
75
100
125
Fig.3 D
2
PAK RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
I
T(RMS)
(A)
1E+0
D
2
PAK
(S=1cm
2
)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
K=[Z
th
/R
th
]
Z
th(j-c)
Z
th(j-a)
TO-263AB
TO-220AB
TO-220AB (insulated)
1E-1
1E-2
Z
th(j-a)
TO-3P(insulated)
T
amb
(°C)
25
50
75
100
125
0.0
0
1E-3
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Fig.5 On-state characteristics (maximum values).
Fig.6 Surge peak on-state current versus number
of cycles.
I
TSM
(A)
t=20ms
I
300
100
(A)
300
250
T
j
=T
j
max
200
150
T
j
max.
V
to
= 0.85
V
R
d
= 16
mΩ
Non repetitive
T
j
initial=25°C
One cycle
10
T
j
=25°C
100
50
Repetitive
T
c
=75°C
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
1
10
Number of cycles
100
1000
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