RoHS
26T Series RoHS
SEMICONDUCTOR
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lTSM (A), l2t(A2s)
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
3000
1000
2.5
2.0
1.5
1.0
0.5
0.0
Tj initial=25°C
dI/dt limitation:
50A/µs
IGT
ITSM
IH & IL
I2t
Tj(°C)
tp(ms)
100
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120 140
Fig.9 Relative variation of critical rate of decrease
Fig.10 Relative variation of critical rate of decrease
of main current versus Tj
of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5
4
CW/BW
B
3
2
1
0
Tj(°C)
(dV/dt)c (V/µs)
0.1
100.0
1.0
10.0
0
25
50
75
100
125
Fig.11 D2PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
Rth(j-a)(°C/W)
80
70
60
50
40
TO-263
30
20
10
0
S(cm2)
0
4
8
12
16
20
24
28
32
36
40
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