SEMICONDUCTOR
RoHS
26T Series
RoHS
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
l
TSM
(A), l
2
t(A
2
s)
3000
T
j
initial=25°C
dI/dt limitation:
50A/µs
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
2.0
I
TSM
1000
I
GT
1.5
I
2
t
I
H
&
I
L
1.0
0.5
t
p
(ms)
100
0.01
0.0
0.10
1.00
10.00
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Fig.10 Relative variation of critical rate of decrease
of main current versus T
j
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
B
CW/BW
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
6
5
4
3
2
1
100.0
0
0
25
50
75
100
125
(dV/dt)c (V/µs)
0.1
1.0
10.0
T
j
(°C)
Fig.11 D
2
PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
TO-263
S(cm
2
)
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