RoHS
26T Series RoHS
SEMICONDUCTOR
(TJ= 25 ºC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
SNUBBERLESS and Logic level (3 quadrants)
26Txxxx
Unit
SYMBOL
TEST CONDITIONS
QUADRANT
BW
CW
(1)
I - II - III
I - II - III
IGT
35
mA
V
50
VD = 12 V, RL = 30Ω
MAX.
VGT
1.3
0.2
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
I - II - III
VGD
MIN.
MAX.
MAX.
V
(2)
50
IT = 500 mA
IH
mA
75
I - III
70
80
80
IG = 1.2 IGT
IL
mA
II
100
dV/dt(2)
500
13
VD = 67% VDRM gate open ,T = 125°C
V/µs
1000
22
,
j
MIN.
(dI/dt)c(2)
Without snubber, T = 125°C
j
A/ms
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
26Txxxx
B
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
50
I - II - III
(1)
IGT
MAX.
mA
VD = 12 V, RL = 30Ω
IV
100
1.3
VGT
VGD
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
0.2
(2)
mA
IH
MAX.
MAX.
80
I - III - IV
70
IL
IG = 1.2 IGT
mA
160
II
dV/dt(2)
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c =13.3 A/ms, Tj = 125°C
V/µs
V/µs
MIN.
MIN.
500
10
(dV/dt)c(2)
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
16
(2)
ITM = 35 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
3
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-3P
0.6
0.8
TO-263/TO-220AB
TO-3P Insulated
TO-220AB Insulated
TO-263
Rth(j-c)
Junction to case (AC)
0.9
1.7
45
60
50
S = 1 cm2
°C/W
Rth(j-a)
TO-220AB Insulated, TO-220AB
TO-3P, TO-3P Insulated
Junction to ambient
S = Copper surface under tab.
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