SEMICONDUCTOR
RoHS
30PT Series
RoHS
Stansard SCRs, 30A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
30
600 to 1600
4
to
50
Unit
A
V
mA
A1
A2
G
1
2
3
A2
TO-220AB
(non-Insulated)
(30PTxxA)
A2
TO-220AB
(lnsulated)
(30PTxxAI)
DESCRIPTION
The 30PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power dissipation are critical such as solid
state relay, welding equipment and high power
control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A1 A2
G
A2
A1 A2
G
A1 A2 G
TO-3P
(non-Insulated)
(30PTxxB)
TO-3P
(Insulated)
(30PTxxBI)
2
(A2)
TO-263
(D
2
PAK)
(30PTxxH)
TO-247AB
(30PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
TEST CONDITIONS
TO-3P/TO-247AB
I
T(RMS)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
TO-3P/TO-247AB
I
T(AV)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
V
RGM
T
j
=125ºC
600
to 1600
- 40
to
+ 150
ºC
Operating junction temperature range
Maximum peak reverse gate voltage
- 40
to
+ 125
5
V
V
F =50 Hz
F =60 Hz
t
p
= 10 ms
F = 60 Hz
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
T
c
=100°C
T
c
=95°C
T
c
=80°C
T
c
=100°C
T
c
=95°C
T
c
=80°C
t = 20 ms
t = 16.7 ms
400
420
800
50
4
10
1
A
A
2
s
A/µs
A
W
W
19
A
30
A
VALUE
UNIT
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
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