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40PT10AI 参数 Datasheet PDF下载

40PT10AI图片预览
型号: 40PT10AI
PDF下载: 下载PDF文件 查看货源
内容描述: Stansard可控硅, 40A [Stansard SCRs, 40A]
分类和应用: 可控硅
文件页数/大小: 5 页 / 893 K
品牌: NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
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SEMICONDUCTOR
RoHS
40PT Series
RoHS
Stansard SCRs, 40A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
40
600 to 1600
4
to
35
Unit
A
V
mA
1
2
1
3
2
3
2
TO-220AB
(non-Insulated)
(40PTxxA)
A2
TO-220AB
(lnsulated)
(40PTxxAI)
DESCRIPTION
The 40PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where in-rush current conditions are critical such
as overvoltage crowbar protection circuits in power
supplies, in-rush current limiting circuits, solid
state relay in back to back configuration, welding
equipment and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A1 A2
G
A1 A2 G
TO-3P
(non-Insulated)
(40PTxxB)
TO-3P
(Insulated)
(40PTxxBI)
A2
A1 A2
G
1
2
3
2
(A2)
TO-263
(D
2
PAK)
(40PTxxH)
TO-247AB
(non-Insulated)
(40PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
TEST CONDITIONS
TO-3P/TO-247AB
I
T(RMS)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
TO-3P/TO-247AB
I
T(AV)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
V
RGM
T
j
=125ºC
600
to 1600
- 40
to
+ 150
ºC
Operating junction temperature range
Maximum peak reverse gate voltage
- 40
to
+ 125
5
V
V
F =50 Hz
F =60 Hz
t
p
= 10 ms
F = 60 Hz
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
T
c
=95°C
T
c
=90°C
T
c
=80°C
T
c
=95°C
T
c
=90°C
T
c
=80°C
t = 20 ms
t = 16.7 ms
460
480
1058
50
4
10
1
A
A
2
s
A/µs
A
W
W
25
A
40
A
VALUE
UNIT
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
www.nellsemi.com
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