RoHS
41T Series RoHS
SEMICONDUCTOR
Fig.5 Surge peak on-state current versus number
of cycles.
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse and corresponding
value of l2t.
ITSM(A),l2t(A2s)
ITSM(A)
10000
1000
450
Tj initial =25°C
Pulse width tp <10 ms
ITSM
400
350
t=20ms
dl/dt limitation
One cycle
50A/µs
Non repetitive
T initial=25°C
j
I2t
300
250
200
Repetitive
T =70°C
150
100
50
c
tp(ms)
Number of cycles
100
0.01
0
0.10
1.00
10.00
1
10
100
1000
Fig.7 Relative variation of gate trigger, holding
and latching current versus junction
temperature.
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / specified (dI/dt)c
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
2.0
2.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
lGT
1.5
1.0
0.5
0.0
Typical values
lH & lL
0.6
(dV/dt)c (V/µs)
Tj(°C)
0.4
-40
-20
0
20
40
60
80
100 120 140
0.1
1.0
10.0
100.0
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
0
Tj(°C)
0
25
50
75
100
125
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