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4PT06AI-08 参数 Datasheet PDF下载

4PT06AI-08图片预览
型号: 4PT06AI-08
PDF下载: 下载PDF文件 查看货源
内容描述: 敏感栅可控硅, 4A [Sensitive gate SCRs, 4A]
分类和应用: 可控硅
文件页数/大小: 6 页 / 199 K
品牌: NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
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SEMICONDUCTOR
4PT Series
Sensitive gate SCRs, 4A
RoHS
RoHS
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
4
600 to 800
10 to
2
00
Unit
A
2
2
1
2
3
V
µA
1
2
3
TO-251
(I-PAK)
(4PTxxF)
TO-252
(D-PAK)
(4PTxxG)
2
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the available
gate current is limited, such as motor control for hand
tools, kitchen aids, capacitive discharge ignitions,
overvoltage crowbar protection for low power supplies
among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
1
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(4PTxxA)
2
(A2)
TO-220AB
(lnsulated)
(4PTxxAI)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
T(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F = 60 Hz
T
p
= 20 µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
Tc=115°C
Tc=110°C
Tc=115°C
Tc=110°C
t = 20 ms
t = 16.7 ms
2.5
30
33
4.5
50
1.2
0.2
600 and 800
- 40 to + 150
ºC
- 40 to + 125
A
A
2
s
A/µs
A
W
V
A
VALUE
4
UNIT
A
www.nellsemi.com
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