RoHS
4T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
4Txxxx
Unit
QUADRANT
SYMBOL
TEST CONDITIONS
TW
SW
CW
(1)
IGT
I - II - III
I - II - III
MAX.
MAX.
05
10
35
mA
V
VD = 12 V, RL = 30Ω
VGT
1.3
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
MIN.
I - II - III
0.2
V
(2)
IT = 200 mA
IH
mA
15
25
30
35
10
I - III
50
60
10
15
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
20
40
400
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
-
-
Tj = 125°C
Tj = 125°C
Tj = 125°C
2.7
2.0
-
1.8
0.9
-
(dI/dt)c(2)
MIN.
A/ms
Without snubber
2.5
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
4Txxxx
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
T
5
5
D
5
S
A
10
10
10
25
I - II - III
(1)
IGT
MAX.
mA
10
VD = 12 V, RL = 30Ω
IV
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 200 mA
(2)
5
10
15
5
10
10
20
5
10
15
25
10
25
25
40
50
mA
IH
MAX.
MAX.
I - III - IV
IL
IG = 1.2 IGT
mA
II
dV/dt(2)
MIN.
MIN.
VD = 67% VDRM, gate open, Tj = 125°C
V/µs
(dV/dt)c(2)
(dI/dt)c = 1.7 A/ms,
Tj = 125°C
0.5
1
2
5
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
VALUE
1.55
0.85
100
5
(2)
ITM = 5.5 A, tP = 380 µs
Threshold voltage
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VTM
VTO
MAX.
MAX.
MAX.
V
(2)
(2)
Dynamic resistance
RD
mΩ
µA
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
1
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
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