RoHS
4T Series RoHS
SEMICONDUCTOR
Fig.5 On-state characteristics (maximum values).
Fig.6 Surge peak on-state current versus number
of cycles.
ITM (A)
ITSM (A)
100
40
T =25°C
j
35
30
25
20
15
10
5
T =125°C
j
t=20ms
One cycle
Non repetitive
Tj initial=25°C
10
1
Repetitive
T =100°C
c
Tj max. :
Vto = 0.85 V
Rd = 100 mW
VTM(V)
Number of cycles
0
0
1
2
3
4
5
6
7
8
9
10
1
10
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lTSM (A), l2t(A2s)
l
,l ,l [T ] / l ,l ,l [T =25°C]
H L j GT H L j
GT
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
Tj initial=25°C
IGT
dI/dt limitation:
50A/µs
ITSM
IH & IL
10
I2t
T (°C)
j
tp(ms)
-40
-20
0
20
40
60
80
100
120 140
1
0.01
0.10
1.00
10.00
Fig.10 Relative variation of critical rate of decrease
of main current versus junction temperature
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
(dl/dt)c [T ] / (dl/dt)c [T specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
j
j
2.4
2.2
2.0
1.8
1.6
6
5
4
1.4
A
3
2
1
0
1.2
1.0
0.8
S
D
0.6
0.4
0.2
0.0
T
T (°C)
j
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
0
25
50
75
100
125
Fig.11 DPAK thermal resistance junction to
ambient versus copper surface under
tab (priented circuit board Fr4, copper
thickness:35 µm)
Rth(j-a)°(C/W)
100
90
80
70
60
50
40
30
20
10
0
S(cm2)
20
0
4
8
12
16
24
28 32
36
40
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