SEMICONDUCTOR
50PTS Series
RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK AND
(1)
OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
(2)
V
I
DRM
/I
RRM
, MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
06
08
50PT
600
800
1000
1200
1600
700
900
1100
1300
1700
15
10
12
16
Note
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed
20
A/µs
(2)
For voltage pulses with tp
≤
5
ms
FORWARD CONDUCTION
PARAMETER
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
VALUES
Maximum average forward current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-reptitive surge current
50
94
78.5
1430
1490
1200
UNITS
A
ºC
A
t
= 10ms
I
TSM
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
t
= 8.3ms
No voltage
reapplied
100%V
RRM
reapplied
No voltage
reapplied
100%V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
A
1255
10.22
9.32
7.23
6.59
102.2
0.94
V
1.08
A
2
√
s
Maximum l²t for fusing
I
2
t
t
= 10ms
t
= 8.3ms
A
2
s
Maximum l²√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
I
2
√t
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
(16.7 % x
πx
l
T(AV)
< l <
πx
l
T(AV)
),
T
J
= T
J
maximum
(
πx
l
T(AV)
< I < 20
×
π×
I
T(AV)
),T
J
=T
J
maximum
T
J
= T
J
maximum
(16.7 % x
πx
l
T(AV)
< l <
πx
l
T(AV)
),
T
J
= T
J
maximum
(
πx
l
T(AV)
< I < 20
×
π×
l
T(AV)
),
T
J
= T
J
maximum
l
pk
= 157 A, T
J
= 25°C
T
J
= 25
°C,
anode supply 22 V, resistive load
initial l
T
= 2A
Anode supply 6V , resistive load
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
l
H
l
L
4.08
mΩ
3.34
1.60
150
mA
300
V
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