SEMICONDUCTOR
RoHS
55PT Series
RoHS
Fig.5 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
value of l
2
t .
Fig.6 Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
(typical values)
I
TSM
(A),
l
2
t
(A
2
s)
10000
T
j
initial=25°C
3.0
2.5
dI/dt
≤
150A/µs
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.0
I
TSM
I
2
t
1000
1.5
1.0
t=10ms
Half cycle
l
GT
l
H
&l
L
0.5
tp
(ms)
T
j
(°C)
0.0
1.0
10.0
-40
-20
0
20
40
60
80
100
120
140
100
0.01
0.1
Case Style
TO-220AB
10.54 (0.415)
MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
16.13 (0.635)
15.87 (0.625)
3
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
1
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
PIN
2
2
(A2)
(G)3
1(A1)
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