SEMICONDUCTOR
RoHS
55PT Series
RoHS
Stansard SCRs, 55A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
55
600 to 1600
80
Unit
A
V
mA
1
2
1
3
2
3
2
TO-220AB
(non-Insulated)
(55PTxxA)
A2
TO-220AB
(lnsulated)
(55PTxxAI)
DESCRIPTION
The 55PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power handling and power dissipation are
critical, such as solid state relay, welding equipment
and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation(2500V
RMS
).
A1 A2
G
A1 A2
G
A1 A2 G
TO-3P
(non-Insulated)
(55PTxxB)
TO-3P
(Insulated)
(55PTxxBI)
A2
1
2
3
2
(A2)
TO-263
(D
2
PAK)
(55PTxxH)
TO-247AB
(non-Insulated)
(55PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
TEST CONDITIONS
TO-3P/TO-247AB
I
T(RMS)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
V
D
= 67% V
DRM
, t
p
= 200μs, I
G
= 0.3A
d
IG
/dt = 0.3A/μs
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
V
RGM
T
j
=125ºC
600
to 1600
- 40
to
+ 150
ºC
- 40
to
+ 125
5
V
V
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
5
10
2
A
W
W
TO-3P/TO-247AB
I
T(AV)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
I
TSM
I
2
t
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
c
=85°C
T
c
=80°C
T
c
=70°C
T
c
=85°C
T
c
=80°C
T
c
=70°C
t = 20 ms
t = 16.7 ms
520
540
1352
A
A
2
s
35
A
55
A
VALUE
UNIT
dI/dt
F = 60 Hz
T
j
= 125ºC
150
A/µs
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