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6PT06F 参数 Datasheet PDF下载

6PT06F图片预览
型号: 6PT06F
PDF下载: 下载PDF文件 查看货源
内容描述: Stansard可控硅, 6A [Stansard SCRs, 6A]
分类和应用: 可控硅
文件页数/大小: 5 页 / 146 K
品牌: NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
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SEMICONDUCTOR
6PT Series
Stansard SCRs, 6A
RoHS
RoHS
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
6
600 to 1000
15
Unit
A
2
2
1
2
3
V
mA
1
2
3
TO-251
(I-PAK)
(6PTxxF)
TO-252
(D-PAK)
(6PTxxG)
DESCRIPTION
The 6PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
1
2
3
2
1
2
3
TO-220AB
(Non-lnsulated)
(6PTxxA)
2
(A2)
TO-220AB
(lnsulated)
(6PTxxAI)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
T(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F = 60 Hz
T
p
= 20 µs
T
p
=20
µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
Tc=110°C
Tc=105°C
Tc=110°C
Tc=105°C
t = 20 ms
t = 16.7 ms
3.8
70
73
24.5
50
4
10
1
600 to 1000
- 40 to + 150
ºC
- 40 to + 125
A
A
2
s
A/µs
A
W
W
V
A
VALUE
6
UNIT
A
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
www.nellsemi.com
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