SEMICONDUCTOR
RoHS
6T Series
RoHS
Fig.5 Surge peak on-state current versus number
of cycles.
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
I
TSM
(A),
I t
(A
s)
1000
T
j
initial=25°C
2
2
I
TSM
(A)
70
60
t=20ms
50
40
30
20
10
0
1
10
Repetitive
T
c
=105°C
Non repetitive
T
j
initial=25°C
One cycle
dI/dt limitation:
50A/µs
I
TSM
100
I
2
t
Number of cycles
10
t
p
(ms)
0.01
0.10
1.00
10.00
100
1000
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
GT
,I
H
,I
L
[T
j
] /
I
GT
,I
H
,I
L
[T
j
=25
°C
]
2.5
2.0
I
GT
1.5
IH
&
I
L
TW
BW/CW
SW
1.0
0.5
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)C (typical values)
(Standard types).
Fig.10 Relative variation of critical rate decrease of
main current versus junction temperature .
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10.0
100.0
B
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
C
4
3
2
1
(dV/dt)c (V/µs)
0
0
25
50
T
j
(°C)
75
100
125
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