SEMICONDUCTOR
RoHS
8T Series
RoHS
Fig.4 On-state characteristics (maximum values).
ITM
(A)
100
T
j
max.
Vto
= 0.85
V
Rd
= 50
mΩ
T
j
=T
j
max
Fig.5 Surge peak on-state current versus number
of cycles.
ITSM
(A)
90
80
70
60
50
40
Non repetitive
T
j
initial=25°C
Repetitive
T
c
=100°C
t=20ms
One cycle
10
T
j
=25
°
C
30
20
VTM(V)
10
0
3.0
3.5
4.0
4.5
5.0
1
Number of cycles
1
0.5
1.0
1.5
2.0
2.5
10
100
1000
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
lTSM (A), l
2
t(A
2
s)
1000
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lGT,lH,lL[T
j
] / lGT,lH,lL [T
j
=25°C]
2.5
T
j
initial=25°C
2.0
dI/dt limitation:
50A/µs
IGT
ITSM
1.5
100
1.0
I
2
t
IH
&
IL
0.5
tp
(ms)
T
j
(°C)
10
0.01
0.10
1.00
10.00
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig.8-1 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
Fig.8-2 Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values). Standard Types
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
TW
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
1.8
1.6
1.4
CW/BW
C
B
1.2
SW
1.0
0.8
(dV/dt)c (V/µs)
0.6
10.0
100.0
0.4
0.1
1.0
(dV/dt)c (V/µs)
10.0
100.0
0.1
1.0
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