SEMICONDUCTOR
KBJ50
RoHS
RoHS
N
ell
High Power Products
MAJOR RATINGS AND CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
KBJ50
PARAMETER
SYMBOL
UNIT
04
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I
2
t
V
ISO
T
J
T
STG
V
RRM
V
RSM
V
DC
I
F(AV)
I
FSM
06
600
700
600
08
800
900
800
50
450
10
1000
1100
1000
12
1200
1300
1200
V
V
V
A
A
400
500
400
1012
2500
-40
to 150
-40
to 125
A
2
s
V
ºC
ºC
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
I
F = 25A
T
A = 25°C
T
A = 150°C
SYMBOL
KBJ50
UNIT
04
V
F
I
R
06
08
1.10
5
500
10
12
V
µA
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
THERMAL AND MECHANICAC
(T
A
= 25°C unless otherwise noted)
KBJ50
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
04
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
06
08
1.0
10
12
°C/W
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of
3
hours to allow for the spread
of the compound.
R
θJC
(1)
to heatsink M3
2.5
Nm
Approximate weight
10
g
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M3 screw.
Device code
KBJ
50
10
3
1
2
3
-
-
-
Module type: “KBJ” Package , 1Ø Bridge
I
F(AV)
rating:"50" for
50A
Voltage code:code x
100 =
V
RRM
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NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
