SEMICONDUCTOR
MTP75S Series
RoHS
RoHS
N
ell
High Power Products
MAJOR RATINGS AND CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
MTP75..S
PARAMETER
SYMBOL
UNIT
08
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I
2
t
V
ISO
T
J
T
STG
V
RRM
V
RSM
V
DC
I
F(AV)
I
FSM
10
1000
1100
1000
12
1200
1300
1200
75
1000
16
1600
1700
1600
18
1800
1900
1800
V
V
V
A
A
800
900
800
5100
2500
-40
to 150
-40
to 125
A
2
s
V
ºC
ºC
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
I
F = 75A
T
A = 25°C
T
A = 150°C
SYMBOL
MTP75..S
UNIT
08
V
F
I
R
10
12
1.3
20
4000
16
18
V
µA
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
THERMAL AND MECHANICAC
(T
A
= 25°C unless otherwise noted)
MTP75..S
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
08
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
to heatsink M6
to terminal M5
10
12
0.24
4
16
18
°C/W
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of
3
hours to allow for the spread
of the compound.
R
θJC
(1)
Nm
4
183
g
Approximate weight
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M6 screw.
Device code
MTP
75
16
3
S
4
(MTP7516S=MTP75/16)
1
2
3
4
-
-
-
-
Module type: ”MTP” for 3Ø
Brıdge
I
F(AV)
rating:"75" for 75A
Voltage code:code x
100 =
V
RRM
Package Outline: S type package
Page 2 of 3
NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
