SEMICONDUCTOR
RoHS
NKT330/NKH330 Series
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
NKT330
NKH330
08
10
12
14
16
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1000
1200
1400
1600
V
RSM
/V
DSM
,
MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
40
I
RRM
/I
DRM
AT
125 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
TEST CONDITIONS
180°
conduction, half sine wave ,50Hz
180°
conduction, half sine wave ,50Hz ,T
C
= 85°C
t
= 10
ms
t
= 8.3
ms
t
= 10
ms
Maximum I
2
t for fusing
I
2
t
t
= 8.3
ms
t
= 10
ms
t
= 8.3
ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUES
330
85
518
9300
UNITS
A
°C
l
T(RMS)
I
TSM
A
No voltage
reapplied
9765
Sine half wave,
initial T
J
=
T
J
maximum
432
394
302
275
4325
1.7
V
1.4
200
mA
400
kA
2
√s
kA
2
s
100%V
RRM
reapplied
t
= 0.1
ms to
10
ms, no voltage reapplied
I
TM
= 900A,
T
J
= 25 °C, 180°
conduction
I
FM
= 900A ,
T
J
= 25 °C, 180°
conduction
Anode supply
= 12
V initial I
T
= 1
A, T
J
= 25 °C
Anode supply
= 12
V resistive load
= 1
Ω
Gate pulse:
10
V,
100 μs,
T
J
= 25 °C
V
TM
V
FM
I
H
I
L
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
ISO
dV/dt
T
J
= 125 °C
50
Hz, circuit to base,
all terminals shorted, 25
ºC
,1s
T
J
=
T
J
maximum,
exponential to
67 %
rated V
DRM
TEST CONDITIONS
VALUES
40
3500
800
UNITS
mA
V
V/μs
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