SBD
T y p e :
C10T10Q
C10T10
10Q
OUTLINE DRAWING
FEATURES
*SQUARE-PAK TO-263AB(SMD)
Packaged in 24mm Tape and Reel
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150
°C
operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Approx Net Weight:
1.4g
Symbol
V
RRM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
120
10
C10T10Q
100
50 Hz Full Sine Wave
Tc=121°C
Resistive Load
11.1
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
A
A
A
°C
°C
Electrical
•
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
I
RM
V
FM
Conditions
Tj= 25°C, V
RM
= V
RRM
per arm
Tj= 25°C, I
FM
= 5 A
Per arm
Min.
-
-
-
Typ.
-
-
-
Max.
1
0.85
3
Unit
mA
V
°C
/W
Rth
(
j-c) Junction to Case
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
