FRD
Type
：
C16P40FR
■OUTLINE DRAWING
構造
：拡散型シリコンダイオード(F R D)
Construction: Diffusion-type Silicon Diode
用途
：高周波整流用
Application : High Frequency Rectification
■最大定格 / Maximum Ratings
Rating
くり返しピーク逆電圧
Repetitive Peak Reverse Voltage
非くり返しピーク逆電圧
Non-repetitive Peak Reverse Voltage
平均整流電流
Average Rectified Output Current
実効順電流
RMS Forward Current
サージ順電流
Surge Forward Current
動�½�接合温度範囲
Operating JunctionTemperature Range
保存温度範囲
Storage Temperature Range
締め付けトルク
Mounting torque
Symbol
V
RRM
V
RSM
I
O
I
F(RMS)
I
FSM
Tjw
Tstg
0.5
120
16
Tc=109℃
Approx Net Weight:5.55g
C16P40FR
400
440
50 Hz、正弦全波通電抵抗負荷
Full Sine Wave Resistive Load
18
50 Hz 正弦全波, 1サイクル, 非くり返し
Full Sine Wave,1cycle,Non-repetitive
- 40 ∼ + 150
- 40 ∼ + 150
推奨値
Recommended value
Unit
V
V
A
A
A
℃
℃
N�½�m
■電気的・熱的特性 / Electrical �½� Thermal Characteristics
Characteristics
ピーク逆電流
Peak Reverse Current
ピーク順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
熱抵抗
Thermal Resistance
Symbol
I
RM
V
FM
trr
Conditions
Tj=25℃,V
RM
=V
RRM
per
Arm
Tj=25℃, I
FM
=8A per
Arm
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
30
1.25
45
2
Unit
μA
V
ns
℃/W
I
FM
= 8 A,
-di/dt= 50 A/μs, Ta= 25℃
接合部・ケース間
Rth(j-c)
Junction to Case
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
