欢迎访问ic37.com |
会员登录 免费注册
发布采购

ECQ10A04-F 参数 Datasheet PDF下载

ECQ10A04-F图片预览
型号: ECQ10A04-F
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基二极管 [Schottky Barrier Diode]
分类和应用: 肖特基二极管
文件页数/大小: 6 页 / 75 K
品牌: NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
 浏览型号ECQ10A04-F的Datasheet PDF文件第2页浏览型号ECQ10A04-F的Datasheet PDF文件第3页浏览型号ECQ10A04-F的Datasheet PDF文件第4页浏览型号ECQ10A04-F的Datasheet PDF文件第5页浏览型号ECQ10A04-F的Datasheet PDF文件第6页  
10A 40V Cathode Common
SBD
Type :
ECQ10A04-
ECQ10A04-F
OUTLINE DRAWING
For High Frequency Rectification
FEATURES
* High VRM SBD
* Low Forward Voltage Drop and Low Noise
* Fully Molded Isolation
* Dual Diodes Cathode Common
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
Symbol
V
RRM
10
I
O
2.0
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
I
F(RMS)
I
FSM
Tjw
Tstg
100
Approx Net Weight:0.30g
ECQ10A04-F
40
50 Hz,Full Sine Wave
Tc=105°C
Resistive Load
50 Hz,Full Sine Wave
Ta=28°C Resistive Load
P.C.Board mounted *
11.1
50 Hz Full Sine Wave,1cycle
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
A
A
A
°C
°C
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
*: Print Land 20x20
Symbol
Conditions
Min.
-
-
-
-
Typ.
-
-
-
-
Max. Unit
3
0.55
4
80
mA
V
°C/W
I
RM
Tj=25°C,V
RM
=V
RRM
per Diode
V
FM
Tj=25°C, I
FM
=5A per Diode
Rth(j-c) Junction to Case
Junction to Ambent
Rth(j-a)
With P.C.Board mounted *