Electrical
•
Thermal Characteristics
Characteristics
Peak Off-State Current
Peak On-State Voltage
Gate Current to Trigger
Symbol
I
DM
V
TM
I
GT
Test Conditions
V
DM
= V
DRM,
Tj=125°C
I
TM
= 180A, Tj=25°C
Tj=-40°C
V
D
=6V,I
T
=1A
Tj=25°C
Tj=125°C
Tj=-40°C
V
D
=6V,I
T
=1A
Tj=25°C
Tj=125°C
V
D
=2/3V
DRM
Tj=125°C
V
D
=2/3V
DRM
Tj=125°C
Maximum Value.
Min. Typ. Max.
30
1.45
200
100
50
4
2.5
2
0.25
500
100
6
2
4
100
50
0.25
0.1
Unit
mA
V
mA
Gate Voltage to Trigger
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance *1
Value Per 1Arm
*1: Value Per Module
V
GT
V
GD
dv/dt
V
V
V/µs
µs
µs
µs
µs
mA
I
TM
=I
O
,V
D
=2/3V
DRM
tq
dv/dt=20V/µs, V
R
=100V
-di/dt=20A/µs, Tj=125°C
tgt
Tj=25°C, I
TM
=I
T(RMS)
V
D
=100V, I
G
=200mA
td
di
G
/dt=0.2A/µs
tr
I
L
Tj=25°C
I
H
Tj=25°C
Rth(j-c) Junction to Case
Base Plate to Heat Sink
Rth(c-f)
with Thermal Compound
°C/W
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
