THYRISTOR MODULE
133A / 1200 to 1600V
P A T 6 0 1 2
P A H 6 0 1 2
P A T 6 0 1 6
P A H 6 0 1 6
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and
Diode Anti-Parallel Circuit
* High Surge Capability
* UL Recognized, File No. E187184
OUTLINE DRAWING
φ
TYPICAL APPLICATIONS
* AC phase control
* AC switch
PAT
PAH
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Approx Net Weight:155g
Symbol
V
DRM
V
DSM
Grade
PAT/PAH6012
PAT/PAH6016
Unit
V
1200
1300
1600
1700
Max Rated
Value
Parameter
RMS On-State Current
Surge On-State Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
Value per 1 Arm
I
T(RMS)
I
FSM
I
2
t
di/dt
P
GM
P
G(AV)
I
GM
V
GM
V
RGM
Tjw
Tstg
Viso
Ftor
Conditions
50Hz Half Sine Wave condition
Tc=82°C
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
2msec to 10msec
V
D
=2/3V
DRM
, I
TM
=2 I
O
, Tj=125°C
I
G
=200mA, di
G
/dt=0.2A/µs
•
Unit
A
A
A
2
s
A/µs
133
1200
7200
100
5
W
1
W
2
A
10
V
5
V
-40 to +125
°C
-40 to +125
°C
Base Plate to Terminals, AC1min
2500
V
M6 Screw
2.4 to 3.5
N
•
m
M5 Screw
2.4 to 2.8
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
