IGBT
MODULE
CIRCUIT
H-Bridge 50A 1200V
OUTLINE DRAWING
PBMB50B12
P
G1
E1
U
G2
E2
G3
E3
V
G4
E4
N
8- fasten- tab No 110
4- fasten-tab No 250
Dimension(mm)
Approximate Weight : 200g
MAXMUM RATINGS
(Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
F
TOR
PBMB50B12
1200
+/ - 20
50
100
250
-40 to +150
-40 to +125
2500
2
-
Unit
V
V
A
W
°C
°C
V
N•m
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=1200V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=50A,V
GE
=15V
V
CE
=5V,I
C
=50mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 600V
R
L
= 12 ohm
R
G
= 20 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
1.9
-
4200
0.25
0.40
0.25
0.80
Max.
1.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.10
Unit
mA
µA
V
V
pF
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
I
F
I
FM
50
100
Unit
A
Typ.
1.9
0.2
Characteristic
Peak Forward Voltage
Reverse Recovery Time
Symbol
V
F
t
rr
Test Condition
I
F
=50A,V
GE
=0V
I
F
=50A,V
GE
=-10V,di/dt=100A/
µs
Min.
-
-
Max.
2.4
0.3
Unit
V
µs
Unit
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Symbol
R
th(j-c)
Test Condition
Junction to Case
Min.
-
-
Typ.
-
-
Max.
0.5
1.0
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
