MOSFET
MODULE
FEATURES
* Dual MOS FETs Cascaded Circuit
Dual 85A 450V/500V
PD10M441H / PD10M440H
OUTLINE DRAWING
108.0
Dimension(mm)
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
* 300KHz High Speed Switching Possible
Circuit
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
MAXMUM RATINGS
Ratings
Drain-Source Voltage (V
GS
=0V)
Gate - Source Voltage
Continuous Drain Current
Duty=50%
D.C.
Approximate Weight : 220g
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
jw
T
stg
V
ISO
F
TOR
PD10M441H
450
+/ - 20
85 (Tc=25°C)
60 (Tc=25°C)
170 Tc=25°C)
730 Tc=25°C)
-40 to +150
-40 to +125
2000
3.0
2.0
PD10M440H
500
Unit
V
V
A
A
W
°C
°C
V
N•m
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Zero Gate Voltage Drain Current
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
I
DSS
V
GS(th)
I
GSS
r
DS(on)
V
DS(on)
g
fs
C
ies
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=V
DSS
,V
GS
=0V
T
j
=125°C, V
DS
=V
DSS
,V
GS
=0V
V
DS
=V
GS
, I
D
=1mA
V
GS
=+/- 20V,V
DS
=0V
V
GS
=10V, I
D
=40A
V
GS
=10V, I
D
=40A
V
DS
=15V, I
D
=40A
V
DS
=25V,V
GS
=0V,f=1MHz
V
DD
= 1/2V
DSS
I
D
=40A
V
GS
= -5V, +10V
R
G
= 7ohm
Min.
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
3.1
-
75
3.5
65
13
2.2
0.45
140
110
300
50
Max.
1.0
4.0
4.0
1.0
85
3.9
-
-
-
-
-
-
-
-
Unit
mA
V
µA
m-ohm
V
S
nF
nF
nF
ns
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Characteristic
Symbol
Test Condition
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
I
S
I
SM
V
SD
t
rr
Q
r
D.C.
-
I
S
=85A
I
S
=85A, -dis/dt=100A/
µs
Min.
-
-
-
-
-
Typ.
-
-
-
100
0.15
Max.
60
170
2.0
-
-
Unit
A
A
V
ns
µC
Unit
°C/W
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
R
th(j-c)
R
th(c-f)
Test Condition
MOS FET
Diode
Mounting surface flat, smooth, and greased
Min.
-
-
-
Typ.
-
-
-
Max.
0.171
1.2
0.1
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
