PDMB300B12C
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
10
5
600
(Typical)
T
C
=25℃
T
C
=125℃
V
CC
=600V
I
C
=300A
V
GE
=±15V
T
C
=25℃
500
toff
ton
2
1
0.5
Forward Current I
F
(A)
50
100
Switching Time t
(μs)
400
tr
300
tf
0.2
0.1
0.05
200
100
0.5
1
2
5
10
20
0
0
1
2
3
4
Series Gate Impedance R
G
(Ω)
Forward Voltage V
F
(V)
Fig.9- Reverse Recovery Characteristics
(Typical)
1000
5000
Fig.10- Reverse Bias Safe Operating Area
(Typical)
2000
1000
500
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
500
I
F
=300A
T
C
=25℃
R
G
=1.3Ω
V
GE
=±15V
T
C
≦125℃
Collector Current I
C
(A)
200
100
50
trr
200
100
50
20
10
20
2
1
0.5
0.2
I
RrM
10
5
0
600
1200
1800
2400
0.1
0
400
800
1200
1600
-di/dt
(A/μs)
Collector to Emitter Voltage V
CE
(V)
Fig.11- Transient Thermal Impedance
5x10
-1
(℃/W)
2x10
-1
1x10
-1
5x10
-2
2x10
-2
1x10
-2
5x10
-3
2x10
-3
1x10
-3
5x10
-4
2x10
-4
10
-5
FRD
IGBT
Transient Thermal Impedance Rth
(J-C)
T
C
=25℃
1 Shot Pulse
10
-4
10
-3
10
-2
10
-1
1
10
1
Time t
(s)
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
