THYRISTOR MODULE
200A / 800V
PDT2008 PDH2008
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and
Diode Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
OUTLINE DRAWING
PDT
TYPICAL APPLICATIONS
* AC phase control
PDH
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Approx Net Weight:480g
Symbol
V
DRM
V
DSM
V
RRM
V
RSM
Grade
PDT/PDH2008
Unit
V
V
Max Rated
Value
800
960
800
960
arameter
Average Rectified Output Current *1
RMS On-State Current
Surge Forward Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
I
O(AV)
I
T(RMS)
I
FSM
I
2
t
di/dt
P
GM
P
G(AV)
I
GM
V
GM
V
RGM
Tjw
Tstg
Viso
Ftor
Conditions
50Hz Half Sine Wave condition
Tc=65°C
50 Hz Half Sine Wave,1cycle
Non-Repetitive
2msec to 10msec
V
D
=2/3V
DRM
, I
TM
=2 I
O
, Tj=125°C
I
G
=300mA, di
G
/dt=0.2A/µs
•
Unit
A
A
A
A
2
s
A/µs
200
314
4000
80000
100
5
W
1
W
2
A
10
V
5
V
-40 to +125
°C
-40 to +125
°C
Base Plate to Terminals, AC1min
2000
V
M6 Screw
2.5 to 3.5
N
•
m
M8 Screw
9.0 to 10.0
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
