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PHM8001 参数 Datasheet PDF下载

PHM8001图片预览
型号: PHM8001
PDF下载: 下载PDF文件 查看货源
内容描述: MOSFET模块单900A / 150A [MOSFET MODULE Single 900A/150A]
分类和应用: 晶体晶体管功率场效应晶体管脉冲斩波器局域网
文件页数/大小: 4 页 / 132 K
品牌: NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
 浏览型号PHM8001的Datasheet PDF文件第2页浏览型号PHM8001的Datasheet PDF文件第3页浏览型号PHM8001的Datasheet PDF文件第4页  
MOSFET
MODULE
FEATURES
* Trench Gate MOS FET Module
Single 800A /150V
OUTLINE DRAWING
PHM8001
* Super Low Rds(ON) 1.4 milliohms( @800A )
* With Fast Recovery Source-Drain Diode
Circuit
TYPICAL APPLICATIONS
* Chopper Control For FORKLIFTs
MAXMUM RATINGS
Ratings
Drain-Source Voltage (V
GS
=0V)
Gate - Source Voltage
Continuous Drain Current
Duty=50%
D.C.
Approximate Weight : 650g
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
jw
T
stg
V
ISO
F
TOR
M4
M8
PHM8001
150
+/ - 20
800 (Tc=25°C)
640 (Tc=25°C)
1,600 Tc=25°C)
2,650 Tc=25°C)
-40 to +150
-40 to +125
2,500
3.0
1.4
10.5
Unit
V
V
A
A
W
°C
°C
V
N•m
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Gate Terminals
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rise Time
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
I
DSS
I
GSS
V
GS(th)
r
DS(on)
V
DS(on)
g
fs
C
ies
C
oss
C
rss
t
r
t
d(on)
V
DS
=V
DSS
,V
GS
=0V
V
GS
=+/- 20V,V
DS
=0V
V
DS
=V
GS
, I
D
=16mA
V
GS
=10V, I
D
=800A
V
GS
=10V, I
D
=800A
V
DS
=15V, I
D
=800A
V
DS
=10V,V
GS
=0V,f=1MHz
V
DD
= 80V
I
D
=400A
V
GS
= -5V, +10V
R
G
= 0.75 ohm
Min.
-
-
1.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.0
1.15
1.10
-
165
20
20
500
880
180
1,300
Max.
4.8
4.8
3.2
1.4
1.25
-
-
-
-
-
-
-
-
Unit
mA
µA
V
m-ohm
V
S
nF
nF
nF
ns
t
f
t
d(off)
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Characteristic
Symbol
Test Condition
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
I
S
I
SM
V
SD
t
rr
Duty=50%.
D.C. (Terminal Temperature=80
°C
-
I
S
=800A
I
S
=800A, -dis/dt=1,600A/
µs
Min.
-
-
-
-
Typ.
-
-
1.10
130
Max.
800
650
1,600
1.76
-
Unit
A
A
V
ns
Unit
°C/W
THERMAL CHRACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Symbol
R
th(j-c)
R
th(c-f)
Test Condition
Mounting surface flat, smooth, and greased
Min.
-
-
Typ.
-
-
Max.
0.047
0.035