DIODE MODULE
FEATURES
* Isolated Base
* 3 Phase Bridge Circuit
* Designed Power Circuit Board
* High Surge Capability
* UL Recognized, File No. E187184
200A/1200V/1600V
PT200S12 PT200S16
OUTLINE DRAWING
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Approx Net Weight:370g
Symbol
V
RRM
V
RSM
Type / Grade
PT200S12
1200
1300
PT200S16
1600
1750
Max Rated
Value
Unit
V
Parameter
Average Rectified Output Current
Surge Forward Current *1
I Squared t *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
I
O(AV)
I
FSM
I
2
t
Tjw
Tstg
Viso
Ftor
Conditions
3-Phase Full Wave Rectified
Tc=Tt(Terminal)=72°C
50 Hz Half Sine Wave,1Pulse
Non-repetitive
2msec to 10msec
Unit
A
A
200
1850
170000
A
2
s
-40 to +150
°C
-40 to +125
°C
Base Plate to Terminals, AC1min
2500
V
Greased
M5 Screw
2.4 to 2.8
N
•
m
M5
2.4 to 2.8
Electrical
•
Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
*1: Value Per 1Arm
Symbol
Test Conditions
Max. Unit
15
1.35
0.1
0.06
mA
V
°C/W
I
RM
V
RM
= V
RRM,
Tj= 150°C
V
FM
I
FM
= 200A, Tj=25°C
Rth(j-c) Junction to Case (Total)
Base Plate to Heat Sink with Thermal
Rth(c-f)
Compound (Total)
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
