CF5017 series
Electrical Characteristics
3V operation (CF5017ALA, ALB, ALC, ALD)
V
DD
= 2.7 to 3.6V, V
SS
= 0V, Ta =
−
40 to +85
°
C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Condition
min
Q: Measurement cct 1, V
DD
= 2.7V, I
OH
= 8mA
Q: Measurement cct 2, V
DD
= 2.7V, I
OL
= 8mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW
V
OH
= V
DD
V
OL
= V
SS
CF5017ALA
f = 30MHz
CF5017ALB
f = 40MHz
CF5017ALC
f = 60MHz
CF5017ALD
f = 80MHz
Standby current
INHN pull-up resistance
I
ST
R
UP1
R
UP2
CF5017ALA
AC feedback resistance
R
f1
Design value. A monitor pattern on a
wafer is tested.
CF5017ALB
CF5017ALC
CF5017ALD
DC feedback resistance
AC feedback capacitance
Built-in capacitance
R
f2
C
f
C
G
C
D
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
12.7
15
17.3
pF
Measurement cct 3, INHN = LOW
Measurement cct 4
30
2.97
2.97
2.97
2.55
50
8.5
6.8
150
3.5
3.5
3.5
3.0
–
10
8
300
4.03
4.03
4.03
3.45
150
11.5
9.2
2.2
–
0.7V
DD
–
–
–
–
–
–
–
–
2
typ
2.4
0.3
–
–
–
–
7
10
14
19
–
4
max
–
0.4
–
0.3V
DD
10
10
14
20
28
38
5
8
V
V
V
V
µA
µA
mA
mA
mA
mA
µA
M
Ω
k
Ω
k
Ω
k
Ω
k
Ω
k
Ω
k
Ω
pF
pF
Unit
Current consumption
I
DD
Measurement cct 3, load cct 1,
INHN = open, C
L
= 30pF
SEIKO NPC CORPORATION —4