WF5025 series
WF5025AL
×
(3.0V operation)
V
DD
= 2.7 to 3.6V, V
SS
= 0V, Ta =
−40
to +85°C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Condition
min
Q: Measurement cct 1, V
DD
= 2.7V, I
OH
= 4mA
Q: Measurement cct 2, V
DD
= 2.7V, I
OL
= 4mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW
V
OH
= V
DD
V
OL
= V
SS
WF5025AL1
WF5025AL2
Current consumption
I
DD2
Measurement cct 3, load cct 1,
INHN = open, C
L
= 30pF, f = 50MHz
WF5025AL3
WF5025AL4
WF5025AL5
WF5025AL6
Standby current
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
I
ST
R
UP1
R
UP2
R
f
R
D
C
G
C
D
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
Measurement cct 3, INHN = LOW
Measurement cct 4
15
50
340
6.8
Design value. A monitor pattern on a wafer is tested.
8.5
10
11.5
pF
75
–
400
8
150
150
460
9.2
kΩ
kΩ
Ω
pF
2.3
–
0.7V
DD
–
–
–
–
–
–
–
–
–
–
2
typ
2.4
0.3
–
–
–
–
8.5
5.5
4
3.3
2.9
2.7
–
4
max
–
0.4
–
0.3V
DD
10
10
17
11
8
6.6
5.8
5.4
5
8
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
µA
MΩ
Unit
NIPPON PRECISION CIRCUITS INC.—6