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NM27C256QE120 参数 Datasheet PDF下载

NM27C256QE120图片预览
型号: NM27C256QE120
PDF下载: 下载PDF文件 查看货源
内容描述: 262,144位( 32K ×8 )高性能CMOS EPROM [262,144-Bit (32K x 8) High Performance CMOS EPROM]
分类和应用: 内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 12 页 / 185 K
品牌: NSC [ NATIONAL SEMICONDUCTOR ]
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NM27C256 262 144-Bit (32K x 8) High Performance CMOS EPROM
December 1993
NM27C256
262 144-Bit (32K x 8) High Performance CMOS EPROM
General Description
The NM27C256 is a 256K Electrically Programmable Read
Only Memory It is manufactured in National’s latest CMOS
split gate EPROM technology which enables it to operate at
speeds as fast as 120 ns access time over the full operating
range
The NM27C256 provides microprocessor-based systems
extensive storage capacity for large portions of operating
system and application software Its 120 ns access time
provides high speed operation with high-performance CPUs
The NM27C256 offers a single chip solution for the code
storage requirements of 100% firmware-based equipment
Frequently-used software routines are quickly executed
from EPROM storage greatly enhancing system utility
The NM27C256 is configured in the standard EPROM pin-
out which provides an easy upgrade path for systems which
are currently using standard EPROMs
The NM27C256 is one member of a high density EPROM
Family which range in densities up to 4 Mb
Features
Y
Y
Y
Y
High performance CMOS
120 ns access time
JEDEC standard pin configuration
28-pin DIP package
32-pin chip carrier
Drop-in replacement for 27C256 or 27256
Manufacturer’s identification code
Block Diagram
TL D 10833 – 1
TRI-STATE is a registered trademark of National Semiconductor Corporation
HPC
TM
is a trademark of National Semiconductor Corporation
C
1995 National Semiconductor Corporation
TL D 10833
RRD-B30M65 Printed in U S A