BD202 参数 Datasheet PDF下载

NTE182 (NPN) & NTE183 (PNP)

Silicon Complementary Transistors

General Purpose Amplifier, Switch

Description:

The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use

in general purpose amplifier and switching applications.

Features:

D

DC Current Gain Specified to 10A

D

High Current Gain–Bandwidth Product: f

T

= 2MHz (Min) @ I

C

= 500mA

Absolute Maximum Ratings:

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector–Base Voltage, V

CB

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V

Emitter–Base Voltage, V

EB

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Base Current, I

B

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A

Total Device Dissipation (T

C

= +25°C), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/°C

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39°C/W

Electrical Characteristics:

(T

C

=+25°C unless otherwise specified)

Parameter

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

V

CEO(sus)

I

C

= 200mA, I

B

= 0, Note 1

I

CEO

I

CEX

V

CE

= 30V, I

B

= 0

V

CE

= 70V, V

BE(off)

= 1.5V

V

CE

= 70V, V

BE(off)

= 1.5V,

T

C

= +150°C

I

CBO

Emitter Cutoff Current

I

EBO

V

CB

= 70V, I

E

= 0

V

CB

= 70V, I

E

= 0, T

C

= +150°C

V

BE

= 5V, I

C

= 0

60

–

–

–

–

–

–

–

–

–

–

–

–

–

–

700

1.0

5.0

1.0

10

5.0

V

µA

mA

mA

mA

mA

mA

Symbol

Test Conditions

Min

Typ Max Unit

Note 1. Pulse Test: Pulse Width

≤

300µs. Duty Cycle

≤

2%.