NTE102 (PNP) & NTE103 (NPN)
Germanium Complementary Transistors
Power Output, Driver
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me-
dium–speed saturated switching applications.
Features:
D
Low Collector–Emitter Saturation Voltage:
V
CE(sat)
= 200mV Max @ I
C
= 24mA
D
High Emitter–Base Breakdown Voltage:
V
(BR)EBO
= 12V Min @ I
E
= 20µA
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Emitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above +25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above +25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Storage Junction Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Punch–Through Voltage
Collector Cutoff Current
V
(BR)CBO
I
C
= 20µA, I
E
= 0
V
(BR)EBO
I
E
= 20µA, I
C
= 0
V
PT
I
CBO
I
EBO
V
EBfl
= 1V, Note 1
V
CB
= 12V, I
E
= 0
V
CB
= 12V, I
E
= 0, T
A
= +80°C
Emitter Cutoff Current
V
EB
= 2.5V, I
C
= 0
25
12
24
–
–
–
–
–
–
0.8
20
0.5
–
–
–
5.0
90
2.5
V
V
V
µA
µA
µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. V
PT
is determined by measuring the Emitter–Base floating potential V
EBfl
, using a voltmeter
with 11MΩ minimum input impedance. The Collector–Base Voltage, V
CB
, is increased until
V
EBfl
= 1V; this value of V
CB
= (V
PT
+ 1).
NTE [ NTE ELECTRONICS ]
