NTE108
Silicon NPN Transistor
High Frequency Amplifier
Description:
The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency
amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise
and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . +200°C/W
Note 1. R
ΘJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 3mA, I
B
= 0, Note 2
V
(BR)CBO
I
C
= 1µA, I
E
= 0
V
(BR)EBO
I
E
= 10µA, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
15
30
3
–
–
–
–
–
–
–
–
10
V
V
V
nA
Symbol
Test Conditions
Min
Typ Max Unit
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
NTE [ NTE ELECTRONICS ]
