NTE112
Silicon Small Signal Schottky Diode
Description:
The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF
mixers and ultrafast switching applications.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Continuous Current (T
A
= +25°C, Note 1), I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Surge Non–Repetitive Forward Current (t
p
≤
1s, Note 1), I
FSM
. . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°
Thermal Resistance, Junction–to–Ambient (Note 1), R
th (j–a)
. . . . . . . . . . . . . . . . . . . . . . . . 400°C/W
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), T
L
. . . . . . . . . . +230°C
Note 1. On infinite heatsink with 4mm lead length.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Static Characteristics
Breakdown Voltage
Forward Voltage Drop
Reverse Current
Dynamic Characteristics
Capacitance
Stored Charge
Frequency
C
Q
S
F
V
R
= 0V, f = 1MHz
I
F
= 10mA, Note 3
f = 1GHz, Note 4
–
–
–
–
–
6
1
3
7
pF
pC
dB
V
(BR)
V
F
I
R
I
R
= 100µA
I
F
= 10mA, Note 2
V
R
= 1V, Note 2
5
–
–
–
–
–
–
0.55
0.05
V
V
µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle < 2%.
Note 3. Measured on a B–line Electronics QS–3 stored charge meter.
Note 4. Noise Figure Test: – Diode is inserted in a tuned stripline circuit.
Local oscillator frequency 1GHz
Local oscillator power 1mW
Intermediate frequency amplifier, tuned on 30MHz, has a noise
figure, 1.5dB.
NTE [ NTE ELECTRONICS ]
