NTE130 (NPN) & NTE219 (PNP)
Silicon Power Transistor
Audio Power Amp, Medium Speed Switch
Description:
The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case
designed for general purpose switching and amplifier applications.
Features:
D
DC Current Gain: h
FE
= 20 – 70 @ I
C
= 4A
D
Collector–Emitter Saturation Voltage: V
CE(sat)
= 1.1V (Max) @ I
C
= 4A
D
Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52°C/W
Electrical Characteristics:
(T
C
=+25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
V
CER(sus)
I
C
= 200mA, R
BE
= 100Ω
, Note 1
I
CEO
I
CEX
Emitter Cutoff Current
I
EBO
V
CE
= 30V, I
B
= 0
V
CE
= 100V, V
BE(off)
= 1.5V
V
CE
= 100V, V
BE(off)
= 1.5V, T
C
= +150°C
V
BE
= 7V, I
C
= 0
60
70
–
–
–
–
–
–
–
–
–
–
–
–
0.7
1.0
5.0
5.0
V
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
≤
300µs. Duty Cycle
≤
2%.
NTE [ NTE ELECTRONICS ]
