NTE133
N–Channel JFET Silicon Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25V
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case for 10sec), T
L
. . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Gate–Source Breakdown Voltage
Gate Reverse Current
Symbol
Test Conditions
Min
–25
–
–
–
–0.4
0.5
1000
Typ
–
–
–
–
–
–
–
Max
–
–1
–1
–6.5
–6.0
15
7500
Unit
V
nA
µA
V
V
mA
µmho
V
(BR)GSS
I
G
= 1µA, V
DS
= 0
I
GSS
V
GS(off)
V
GS
I
DSS
|y
fs
|
V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0, T
A
= +150°C
Gate–Source Cutoff Voltage
Gate–Source Voltage
Zero–Gate–Voltage Drain Current
Forward Transfer Admittance
I
D
= 1µA, V
DS
= 15V
I
D
= 50µA, V
DS
= 15V
V
DS
= 15V, V
GS
= 0
V
DS
= 15V, V
GS
= 0, f = 1kHz
NTE [ NTE ELECTRONICS ]
