NTE16004 参数 Datasheet PDF下载

NTE16004 (PNP) & NTE16005 (NPN)

Silicon Complementary Transistors

High Current, General Purpose

Absolute Maximum Ratings:

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Continuous Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Base Current, I

B

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Total Device Dissipation (T

C

= +25°C), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/°C

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector Cutoff Current

V

(BR)CEO)

I

C

= 100mA, I

B

= 0

I

CEX

I

EBO

h

FE

V

CE(sat)

V

CE

= 100V, V

BE

= 1.5V

V

CE

= 70V, V

BE

= 1.5V, T

C

= +150°C

Emitter Cutoff Current

ON Characteristics

(Note 1)

DC Current Gain

I

C

= 500mA, V

CE

= 4V

I

C

= 1A, V

CE

= 2V

Collector–Emitter Saturation Voltage

NTE16004

NTE16005

Base–Emitter ON Voltage

Small–Signal Characteristics

Small–Signal Current Gain

h

fe

I

C

= 50mA, V

CE

= 4V, f = 10MHz

5

–

–

V

BE(on)

I

C

= 500mA, V

CE

= 4V

I

C

= 500mA, I

B

= 50mA

30

10

–

–

–

–

–

–

–

–

130

–

0.7

0.5

1.1

V

V

V

V

BE

= 7V, I

C

= 0

75

–

–

–

–

–

–

–

–

0.1

5.0

0.1

V

mA

mA

mA

Symbol

Test Conditions

Min

Typ

Max

Unit

Note 1. Pulse Test: Pulse Width

≤

300µs, Duty Cycle

≤

2%.