NTE181 参数 Datasheet PDF下载

NTE180 (PNP) & NTE181 (NPN)

Silicon Power Transistor

High Power Audio Amplifier

Description:

The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case

designed for use as output devices in complementary audio amplifiers to 100 watts music power per

channel.

Features:

D

High DC Current Gain: h

FE

= 25 – 100 @ I

C

= 7.5A

D

Excellent Safe Operating Area

Absolute Maximum Ratings:

Collector–Emitter Voltage, V

CER

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Collector–Base Voltage, V

CB

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V

Emitter–Base Voltage, V

EB

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A

Base Current, I

B

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A

Total Device Dissipation (T

C

= +25°C), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/°C

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875°C/W

Electrical Characteristics:

(T

C

=+25°C unless otherwise specified)

Parameter

OFF Characteristics

Collector–Emitter Breakdown Voltage V

(BR)CER

I

C

= 200mA, R

BE

= 100Ω, Note 1

Collector–Emitter Sustaining Voltage

Collector–Base Cutoff Current

Emitter–Base Cutoff Current

V

CEO(sus)

I

C

= 200mA, Note 1

I

CBO

I

EBO

V

CB

= 100V, I

E

= 0

V

CB

= 100V, I

E

= 0, T

C

= +150°C

V

BE

= 4V, I

C

= 0

100

90

–

–

–

–

–

–

–

–

–

–

1.0

5.0

1.0

V

V

mA

mA

mA

Symbol

Test Conditions

Min

Typ Max Unit

Note 1. Pulse Test: Pulse Width

≤

300µs. Duty Cycle

≤

2%.