NTE194
Silicon NPN Transistor
Audio Power Amplifier
Description:
The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
Note 1 R
thJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collctor–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 2
V
(BR)CBO
I
C
= 100µA, I
E
= 0
V
(BR)EBO
I
E
= 10µA, I
C
= 0
I
CBO
I
EBO
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100°C
Emitter Cutoff Current
V
EB
= 4V, I
C
= 0
180
180
6
–
–
–
–
–
–
–
–
–
–
–
–
50
50
50
V
V
V
nA
nA
nA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.
NTE [ NTE ELECTRONICS ]
